Lithographic engineering of anisotropies in (Ga,Mn)As

被引：55

作者：

Huempfner, S. ^{[1
]}

Pappert, K.

Wenisch, J.

Brunner, K.

Gould, C.

Schmidt, G.

Molenkamp, L. W.

Sawicki, M.

Dietl, T.

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 10期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2710478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here the authors present a method which provides patterning induced anisotropy that not only can be applied locally but also dominates over the intrinsic material anisotropy at all temperatures. (c) 2007 American Institute of Physics.

引用

页数：3

共 18 条

[1] Demagnetizing factors for rectangular ferromagnetic prisms [J].

Aharoni, A .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3432-3434

[2] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[3] Tunneling anisotropic magnetoresistance:: A spin-valve-like tunnel magnetoresistance using a single magnetic layer -: art. no. 117203 [J].

Gould, C ;

Rüster, C ;

Jungwirth, T ;

Girgis, E ;

Schott, GM ;

Giraud, R ;

Brunner, K ;

Schmidt, G ;

Molenkamp, LW .

PHYSICAL REVIEW LETTERS, 2004, 93 (11) :117203-1

[4] Magnetic Anisotropies and (Ga,Mn)As-based spintronic devices [J].

Gould, Charles ;

Pappert, Katrin ;

Schmidt, Georg ;

Molenkamp, Laurens W. .

ADVANCED MATERIALS, 2007, 19 (03) :323-340

[5] Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature [J].

Hamaya, K. ;

Taniyama, T. ;

Koike, T. ;

Yamazaki, Y. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)

[6] Control of magnetic anisotropy and magnetotransport in epitaxial micropatterned (Ga,Mn)As wire structures [J].

Hamaya, K ;

Moriya, R ;

Oiwa, A ;

Taniyama, T ;

Kitamoto, Y ;

Munekata, H .

IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (05) :2785-2787

[7] GALVANOMAGNETIC AND THERMOMAGNETIC EFFECTS IN METALS [J].

JAN, JP .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :1-96

[8] Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain [J].

Matsukura, F ;

Sawicki, M ;

Dietl, T ;

Chiba, D ;

Ohno, H .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :1032-1036

[9] ANISOTROPIC MAGNETORESISTANCE IN FERROMAGNETIC 3D ALLOYS [J].

MCGUIRE, TR ;

POTTER, RI .

IEEE TRANSACTIONS ON MAGNETICS, 1975, 11 (04) :1018-1038

[10] Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack -: art. no. 027203 [J].

Rüster, C ;

Gould, C ;

Jungwirth, T ;

Sinova, J ;

Schott, GM ;

Giraud, R ;

Brunner, K ;

Schmidt, G ;

Molenkamp, LW .

PHYSICAL REVIEW LETTERS, 2005, 94 (02)

← 1 2 →