Control of magnetic anisotropy and magnetotransport in epitaxial micropatterned (Ga,Mn)As wire structures

被引：9

作者：

Hamaya, K ^{[1
]}

Moriya, R

Oiwa, A

Taniyama, T

Kitamoto, Y

Munekata, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2003年 / 39卷 / 05期

关键词：

anisotropic; magnetoresistance; (Ga; Mn)As; III-V ferromagnetic semiconductor; wire structure;

D O I：

10.1109/TMAG.2003.815710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present magnetoresistance characteristics of patterned (Ga,Mn)As wire structures, which depend on wire width and thus overall magnetic anisotropy. Cubic and uniaxial magnetocrystalline anisotropies seem to be the, dominant magnetic contributions in 2-mum-wide wires, whereas both magnetocrystalline and shape-induced anisotropies, contribute to magnetization reversal in 1mum-wide wires, as manifested by jumps in the magnetoresistance curves. The role of these two anisotropies in the magnetization reversal is discussed, together with the determination of magnetic easy/hard axes of (Ga,Mn)As wires.

引用

收藏

页码：2785 / 2787

页数：3

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