Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes

被引：21

作者：

Fukumura, T

Shono, T

Inaba, K

Hasegawa, T

Koinuma, H

Matsukura, F

Ohno, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] COMET, Tsukuba, Ibaraki 3050044, Japan

[5] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E | 2001年 / 10卷 / 1-3期

基金：

日本学术振兴会;

关键词：

(Ga; Mn)As; magnetic domains; scanning Hall probe microscope; scanning SQUID microscope;

D O I：

10.1016/S1386-9477(01)00068-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetic domain structure of a ferromagnetic semiconductor, (Ga,Mn)As, is observed with a scanning Hall probe microscope and a scanning SQUID microscope at low temperature. The film with perpendicular magnetization has a maze pattern domain structure similar to those of conventional ferromagnetic materials, whereas the film with in-plane magnetization has unconventional domain structure that show random arrangement of the domains. (C) 2001 Elsevier Science B,V, All rights reserved.

引用

页码：135 / 138

页数：4

共 14 条

[1] SCANNING HALL PROBE MICROSCOPY [J].