Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature

被引：6

作者：

Hamaya, K.

Taniyama, T.

Koike, T.

Yamazaki, Y.

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 12期

关键词：

D O I：

10.1063/1.2196113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the effect of the shape anisotropy on the magnetic domain configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial wire as a function of temperature. Using magnetoresistance measurements, we deduce the magnetic configurations and estimate the relative strength of the shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic anisotropy is found to show a stronger temperature dependence than the shape anisotropy, the effect of the shape anisotropy on the magnetic domain configuration is relatively enhanced with increasing temperature. This information about the shape anisotropy provides a practical means of designing nanostructured spin electronic devices using (Ga,Mn)As. (c) 2006 American Institute of Physics.

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页数：3

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