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Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

被引：24
作者：
Eid, KF
Sheu, BL
Maksimov, O
Stone, MB
Schiffer, P
Samarth, N
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1900938
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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