Mn interstitial diffusion in (Ga,Mn)As

被引：463

作者：

Edmonds, KW ^{[1
]}

Boguslawski, P

Wang, KY

Campion, RP

Novikov, SN

Farley, NRS

Gallagher, BL

Foxon, CT

Sawicki, M

Dietl, T

Nardelli, MB

Bernholc, J

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Japan Sci & Technol Corp, ERATO, Semicond Spintron Project, PL-02668 Warsaw, Poland

[4] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.92.037201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7-0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.

引用

页数：4

共 25 条

[1] Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs [J].

Blinowski, J ;

Kacman, P .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[2] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[3] High-quality GaMnAs films grown with arsenic dimers [J].

Campion, RP ;

Edmonds, KW ;

Zhao, LX ;

Wang, KY ;

Foxon, CT ;

Gallagher, BL ;

Staddon, CR .

JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) :42-48

[4] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].

Chiba, D ;

Takamura, K ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022

[5] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[6] Nitrides as spintronic materials [J].

Dietl, T .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 240 (02) :433-439

[7] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[8] Hall effect and hole densities in Ga1-xMnxAs [J].

Edmonds, KW ;

Wang, KY ;

Campion, RP ;

Neumann, AC ;

Foxon, CT ;

Gallagher, BL ;

Main, PC .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :3010-3012

[9] High-Curie-temperature Ga1-xMnxAs obtained by resistance-monitored annealing [J].

Edmonds, KW ;

Wang, KY ;

Campion, RP ;

Neumann, AC ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT .

APPLIED PHYSICS LETTERS, 2002, 81 (26) :4991-4993

[10] Self-compensation in manganese-doped ferromagnetic semiconductors [J].

Erwin, SC ;

Petukhov, AG .

PHYSICAL REVIEW LETTERS, 2002, 89 (22) :227201-227201

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