Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction

被引:123
作者
Chiba, D
Sato, Y
Kita, T
Matsukura, F
Ohno, H
机构
[1] Tohoku Univ, Elect & Telecommun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, Exploratory Res Adv Technol, Semicond Spintron Project, Tokyo, Japan
关键词
D O I
10.1103/PhysRevLett.93.216602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5x0.3 mum(2) device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2x10(5) A/cm(2) despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.
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页数:4
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