Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

被引：101

作者：

Chiba, D ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

(GaMn)As; tunneling magnetoresistance; spin polarization;

D O I：

10.1016/j.physe.2003.11.172

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented. (C) 2003 Elsevier B.V. All rights reserved.

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页码：966 / 969

页数：4

相关论文

共 26 条

[1] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].

Chiba, D ;

Takamura, K ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022

[2] Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures [J].

Chiba, D ;

Akiba, N ;

Matsukura, F ;

Ohno, Y ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1873-1875

[3] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[4] Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions [J].

Higo, Y ;

Shimizu, H ;

Tanaka, M .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6745-6747

[5] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[6]

KOJIMA E, CONDMAT0212276

[7] Bias voltage and temperature dependence of magnetotunneling effect [J].

Lu, Y ;

Li, XW ;

Xiao, G ;

Altman, RA ;

Gallagher, WJ ;

Marley, A ;

Roche, K ;

Parkin, S .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6515-6517

[8] Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].

Matsukura, F ;

Ohno, H ;

Shen, A ;

Sugawara, Y .

PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040

[9]

Matsukura F, 2002, HANDB MAG M, V14, P1, DOI 10.1016/S1567-2719(09)60005-6

[10]

Matsukura F, 1999, INST PHYS CONF SER, P547