Contribution of shape anisotropy to the magnetic configuration of (Ga, Mn)As

被引：20

作者：

Hamaya, K

Moriya, R

Oiwa, A

Taniyama, T

Kitamoto, Y

Yamazaki, Y

Munekata, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 2B期

关键词：

III-V magnetic semiconductors; (Ga; Mn)As; magnetic anisotropy; shape anisotropy;

D O I：

10.1143/JJAP.43.L306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an effect of shape anisotropy on the magnetic configuration of the magnetic semiconductor (Ga, Mn)As using magnetoresistance (MR) measurements. A substantial change in the MR curve occurs for a wire sample with a width of 0.8 mum, in which the shape anisotropy along the wire axis is more significant than the intrinsic magnetic anisotropy. Moreover, the magnetic configuration of the wire sample depends on the hole concentration which has an influence on the cubic, uniaxial and shape anisotropy, being reflected by the hole induced ferromagnetic characteristics of (Ga, Mn)As.

引用

收藏

页码：L306 / L308

页数：3

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