Ferromagnetic resonance in Ga1-xMnxAs:: Effects of magnetic anisotropy -: art. no. 205204

被引：241

作者：

Liu, X ^{[1
]}

Sasaki, Y ^{[1
]}

Furdyna, JK ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.205204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes a systematic study of ferromagnetic resonance (FMR) carried out on a series of specimens of the ferromagnetic semiconductor Ga1-xMnxAs in thin film form. The GaMnAs layers were grown by low-temperature molecular beam epitaxy either on GaAs or on GaInAs buffers, the two buffers being used to obtain different strain conditions within the ferromagnetic layer. Our aim has been to map out the dependence of the FMR position on temperature and on the angle between the applied magnetic field and crystallographic axes of the sample. The analysis of the FMR data allowed us to obtain the values of the cubic and the uniaxial magnetic anisotropy fields-i.e., those which are associated with the natural (undistorted) zinc blende structure and those arising from of strain.

引用

页数：9

共 22 条

[1] Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures [J].