Magnetization reversal in GaMnAs layers studied by Kerr effect

被引：62

作者：

Hrabovsky, D ^{[1
]}

Vanelle, E

Fert, AR

Yee, DS

Redoules, JP

Sadowski, J

Kanski, J

Ilver, L

机构：

[1] Inst Natl Sci Appl, CNRS, UMR 5830, Phys Mat Condensee Lab, F-31077 Toulouse, France

[2] Chalmers Univ Technol, SE-41296 Gothenburg, Sweden

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Copenhagen, Oersted Lab, Copenhagen, Denmark

[5] Univ Gothenburg, SE-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1506204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, magnetization reversal is investigated in (Ga,Mn)As thin films using the magneto-optical Kerr effect. A Stoner-Wohlfart model, modified to take into account the existence of magnetic reversal discontinuities associated with nucleation and propagation phenomena allows us to estimate most of the characteristic constants. These results demonstrate a reversal behavior analogous to that observed in metallic magnetic layers (coherent rotation followed by a nucleation propagation process). The dynamic study at T=20 K shows a strong increase of the coercivity with the increase of dH/dt. This effect is related to the random distribution of Mn magnetic ions in the lattice. (C) 2002 American Institute of Physics.

引用

页码：2806 / 2808

页数：3

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