Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction

被引：123

作者：

Chiba, D

Sato, Y

Kita, T

Matsukura, F

Ohno, H

机构：

[1] Tohoku Univ, Elect & Telecommun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Exploratory Res Adv Technol, Semicond Spintron Project, Tokyo, Japan

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.93.216602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5x0.3 mum(2) device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2x10(5) A/cm(2) despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.

引用

页数：4

共 25 条

[21] Current-driven excitation of magnetic multilayers [J].