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Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

被引：147
作者：
Sawicki, M
Matsukura, F
Idziaszek, A
Dietl, T
Schott, GM
Ruester, C
Gould, C
Karczewski, G
Schmidt, G
Molenkamp, LW
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Japan Sci & Technol Agcy, ERATO Semicond Spintron Project, Tokyo, Japan
[4] ERATO Semicond Spintron Project, PL-02668 Warsaw, Poland
[5] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
[6] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.70.245325
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.
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页码：1 / 6
页数：6
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