1-eV solar cells with GaInNAs active layer

被引:378
作者
Friedman, DJ [1 ]
Geisz, JF [1 ]
Kurtz, SR [1 ]
Olson, JM [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
solar cells; diffusion length; MOVPE; GaInNAs; GaInAsN; dimethylhydrazine;
D O I
10.1016/S0022-0248(98)00561-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. This device is intended for use as the third junction of future-generation ultrahigh-efficiency three- and four-junction devices. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit currents of 1.8 mA/cm(2), and fill factors from 61% to 66%. The short-circuit currents are of principal concern: the internal quantum efficiencies rise only to about 0.2. We discuss the short diffusion lengths which are the reason for this low photocurrent. As a partial workaround for the poor diffusion lengths, we demonstrate a depletion-width-enhanced variation of one of the prototype devices that trades off decreased voltage for increased photocurrent, with a short-circuit current of 6.5 mA/cm(2) and an open-circuit voltage of 0.29 V. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:409 / 415
页数:7
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