InGaN/GaN nanorod array white light-emitting diode

被引：212

作者：

Lin, Hon-Way ^{[1
]}

Lu, Yu-Jung ^{[1
]}

Chen, Hung-Ying ^{[1
]}

Lee, Hong-Mao ^{[1
]}

Gwo, Shangjr ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

关键词：

gallium compounds; III-V semiconductors; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; wide band gap semiconductors; WELL;

D O I：

10.1063/1.3478515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do not allow for efficient long-wavelength operation beyond the blue region due to a strong quantum confined Stark effect in lattice-mismatched polar InGaN quantum wells. Here we overcome the limitation by using self-assembled GaN nanorod arrays as strain-free growth templates for thick InGaN nanodisks. In combination with enhanced carrier localization and high crystalline quality, this approach allows us to realize full-color InGaN nanodisk emitters. By tailoring the numbers, positions, and thicknesses of polychromatic nanodisk ensembles embedded vertically in the GaN nanorod p-n junction, we are able to demonstrate natural white (color temperature similar to 6000 K) electroluminescence from InGaN/GaN nanorod arrays. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478515]

引用

页数：3

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