Further analysis of space-charge-limited currents in polybenzo[c]thiophene films

被引:13
作者
Musa, I [1 ]
Eccleston, W
Higgins, SJ
机构
[1] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3BX, Merseyside, England
[2] Univ Liverpool, Dept Chem, Liverpool L69 3BX, Merseyside, England
关键词
D O I
10.1063/1.367497
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium-tin-oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be similar to 3 x 10(-5) cm(2) V-1 s(-1). A trap of concentration similar to 1.8 x 10(-7) cm(-3) and energy similar to 0.67 eV from the highest occupied molecular orbital level is estimated. The thickness dependence of the current, at constant voltage, is very close to that expected for a space-charge-limited mechanism. The Tauc band gap determined by optical spectrophotometry was found to be similar to 1.34 eV. (C) 1998 American Institute of Physics.
引用
收藏
页码:5558 / 5560
页数:3
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