Memory performance and retention of an all-organic ferroelectric-like memory transistor

被引：56

作者：

Schroeder, R ^{[1
]}

Majewski, LA ^{[1
]}

Voigt, M ^{[1
]}

Grell, M ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

ferroelectric memory; nonvolatile memory; organic compounds; plastics;

D O I：

10.1109/LED.2004.841186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have built a nonvolatile memory field-effect transistor (FET)-based on organic compounds. The gate-insulating polymer features ferroelectric-like characteristics when spun from solution into an amorphous phase. Thus, the memory transistor is built using techniques developed for organic transistors without requiring high temperature annealing steps. The memory exhibits channel resistance modulations and retention times close in performance to inorganic ferroelectric FETs (FEFETs), yet at a fraction of the cost.

引用

页码：69 / 71

页数：3

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