Toward GW/year of CIGS production within the next decade

被引:113
作者
Dhere, Neelkanth G. [1 ]
机构
[1] Florida Solar Energy Ctr, Cocoa, FL 32922 USA
关键词
energy; photovoltaics; CIGS;
D O I
10.1016/j.solmat.2007.04.003
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A detailed study carried out in 1996-1997 showed that manufacturing cost of crystalline silicon PV modules could be lowered to 1 ECU/Wp when the c-Si annual module production level reaches 500 MWp while an annual production of only 60 MWp would lower production cost of thin-film PV modules to 0.6 ECU/Wp. During 1976-2003, the PV module price has followed the 80% learning curve with cumulative production volume. However, the price reduction has slowed since because of the polysilicon supply problem. Because of their high potential for improvement, thin-film PV and especially copper (Cu)-indium (In)-gallium (Ga)-selenide (Se)-sulfide (GIGS) technology have the potential for growing at the fastest rate and consequently not only to complement the lagging c-Si PV production but also to assist in following the 80% learning curve. This paper reviews the CIGS PV manufacturing processes in comparison to those of other PV technologies and predicts that annual production volume of CIGS thin-film PV modules will exceed 1 GW/year within the next 10 years. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1376 / 1382
页数:7
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