Experimental evidence of the Coulomb gap in a high-mobility 2D electron system in silicon

被引:15
作者
Mason, W
Kravchenko, SV
Furneaux, JE
机构
[1] UNIV OKLAHOMA, LAB ELECT PROPERTIES MAT, NORMAN, OK 73019 USA
[2] UNIV OKLAHOMA, DEPT PHYS & ASTRON, NORMAN, OK 73019 USA
关键词
electrical transport; metal-oxide-semiconductor (MOS) structures; silicon;
D O I
10.1016/0039-6028(96)00572-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In some intermediate temperature range, for low electron densities and zero magnetic field, the resistivity of a two-dimensional electron system in silicon was found to follow the form rho=rho(0) exp [(T-0/T)(1/2)] for at least four orders of magnitude. In addition, in this same region, it was found that in the low T limit, the resistivity follows rho=rho(1) exp [(E(0)/E)(1/2)], where E is the electric field. These dependencies are characteristic of a Coulomb gap in the 2D density of states. We see no evidence of a temperature-dependent or electric-field dependent prefactor. A comparison with the theory shows that there exists a specific set of conditions which are necessary in order to observe this Coulomb gap.
引用
收藏
页码:953 / 956
页数:4
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