Analysis of frequency response of IDT/ZnO/Si SAW filter using the coupling of modes model

被引：12

作者：

Ntagwirumugara, Etienne ^{[1
]}

Gryba, Tadeusz ^{[1
]}

Zhang, Victor Y. ^{[1
]}

Dogheche, Elhadj ^{[1
]}

Lefebvre, Jean-Etienne ^{[1
]}

机构：

[1] Univ Valenciennes, IEMN Dept OAE, F-59313 Valenciennes, France

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2007年 / 54卷 / 10期

关键词：

D O I：

10.1109/TUFFC.2007.495

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we propose a modified coupling-of-modes (COM) approach, which can be used in the practical design of a layered ZnO/Si SAW filter. This is a dispersive SAW-layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3-step ladder type ZnO/Si SAW filter is analyzed and compared with the experimental results.

引用

页码：2011 / 2015

页数：5

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