Growth and characterization of Mn-doped Na1/2Bi1/2TiO3 lead-free ferroelectric single crystal

被引：27

作者：

Liu, Hong ^{[1
,2
]}

Ge, Wenwei ^{[1
]}

Jiang, Xiangping ^{[2
]}

Zhao, Xiangyong ^{[1
]}

Luo, Haosu ^{[1
]}

机构：

[1] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 201800, Peoples R China

[2] Jingdezhen Ceram Inst, Dept Mat Sci & Engn, Jingdezhen 333001, Peoples R China

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 17-18期

关键词：

crystal growth; electrical properties; dielectric relaxer; domain size;

D O I：

10.1016/j.matlet.2008.01.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality and large-size ferroelectric single crystal of 1 at.% Mn-doped Na1/2Bi1/2TiO3 has been successfully grown by top-seeded solution growth technique. X-ray fluorescence analysis determines the actual Mn concentration of 0.24 at.% in as-grown Mn-doped Na1/2Bi1/2TiO3 Crystal, indicating a very low value of Mn ions diffusion into crystal lattice. Temperature dependence of dielectric constant at different frequencies shows that the dielectric relaxor behavior becomes more distinct after Mn-doping. Moreover, the domain size of Mn-doped Na1/2Bi1/2TiO3 Crystal becomes smaller than that of pure Na1/2Bi1/2TiO3 Crystal. At room temperature, the [001]-oriented Mn-doped Na1/2Bi1/2TiO3 Crystal shows enhanced dielectric, piezoelectric and ferroclectric properties compared with that of pure Na1/2Bi1/2TiO3 crystal. It is clearly demonstrated that Mn-doping is a very effective tool to improve electrical performance of Na1/2Bi1/2TiO3 based single crystals. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2721 / 2724

页数：4

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