Growth and characterization of Mn-doped Na1/2Bi1/2TiO3 lead-free ferroelectric single crystal

被引:27
作者
Liu, Hong [1 ,2 ]
Ge, Wenwei [1 ]
Jiang, Xiangping [2 ]
Zhao, Xiangyong [1 ]
Luo, Haosu [1 ]
机构
[1] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 201800, Peoples R China
[2] Jingdezhen Ceram Inst, Dept Mat Sci & Engn, Jingdezhen 333001, Peoples R China
关键词
crystal growth; electrical properties; dielectric relaxer; domain size;
D O I
10.1016/j.matlet.2008.01.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality and large-size ferroelectric single crystal of 1 at.% Mn-doped Na1/2Bi1/2TiO3 has been successfully grown by top-seeded solution growth technique. X-ray fluorescence analysis determines the actual Mn concentration of 0.24 at.% in as-grown Mn-doped Na1/2Bi1/2TiO3 Crystal, indicating a very low value of Mn ions diffusion into crystal lattice. Temperature dependence of dielectric constant at different frequencies shows that the dielectric relaxor behavior becomes more distinct after Mn-doping. Moreover, the domain size of Mn-doped Na1/2Bi1/2TiO3 Crystal becomes smaller than that of pure Na1/2Bi1/2TiO3 Crystal. At room temperature, the [001]-oriented Mn-doped Na1/2Bi1/2TiO3 Crystal shows enhanced dielectric, piezoelectric and ferroclectric properties compared with that of pure Na1/2Bi1/2TiO3 crystal. It is clearly demonstrated that Mn-doping is a very effective tool to improve electrical performance of Na1/2Bi1/2TiO3 based single crystals. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2721 / 2724
页数:4
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