Structural transformation of screw dislocations via thick 4H-SiC epitaxial growth

被引：64

作者：

Kamata, I ^{[1
]}

Tsuchida, H ^{[1
]}

Jikimoto, T ^{[1
]}

Izumi, K ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Yokusuka Res Lab, Yokosuka, Kanagawa 2400196, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 12A期

关键词：

4H-SiC; micropipe; elementary screw dislocation; micropipe closing; structural transformation; epitaxial growth;

D O I：

10.1143/JJAP.39.6496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper? we studied the structural transformation of screw dislocations through gas-phase 4H-SiC epitaxial growth. We confirmed based on the numbers and features of etch pits on a surface after KOH treatment that some micropipes were closed in the epitaxial layer, and were divided into several elementary screw dislocations. We discuss the magnitude of Burgers vectors of micropipes in 4H-SiC substrates in relation to the number of elementary screw dislocations generated by micropipe closing. A depth analysis further revealed that most micropipe closings tool; place in the initial stage of epitaxial growth.

引用

页码：6496 / 6500

页数：5

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