Ion nitriding of Al:: growth kinetics and characterisation of the nitride layer

被引：20

作者：

Telbizova, T ^{[1
]}

Parascandola, S ^{[1
]}

Prokert, F ^{[1
]}

Barradas, NP ^{[1
]}

Richter, E ^{[1
]}

Möller, W ^{[1
]}

机构：

[1] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

SURFACE & COATINGS TECHNOLOGY | 2001年 / 142卷

关键词：

Al; ion nitriding; nitride layer; growth kinetics;

D O I：

10.1016/S0257-8972(01)01126-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To study the kinetics of aluminium (Al) ion nitriding, a series of experiments has been performed at fixed ion beam parameters and substrate temperatures varied from 250 to 400 degreesC at intervals of 50 degreesC. The nitride layers have been analysed by nuclear reaction analysis (NRA), elastic recoil detection analysis (ERDA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Depending on the experimental conditions, the nitriding kinetics are either controlled by the delivery of N ions or by the diffusion of Al atoms. Furthermore, the growth of the nitride layer is limited by poor layer adhesion. XRD analysis reveals the formation of a hexagonal AIN-phase plus a small fraction of the cubic AIN-phase. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1028 / 1033

页数：6