Disorder-driven hysteresis-loop criticality in Co/CoO films

被引:7
作者
Berger, A
Inomata, A
Jiang, JS
Pearson, JE
Bader, SD
Dahmen, K
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Fujitsu File Memory Lab, Atsugi, Kanagawa, Japan
关键词
D O I
10.1063/1.1361272
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of magnetic disorder on the magnetization reversal process in thin Co/CoO films has been investigated. The antiferromagnetic CoO layer allows a reversible tuning of the magnetic disorder by simple temperature variation. For temperatures above a critical temperature T-c, we observe a discontinuous magnetization reversal, whereas smooth magnetization loops occur for T < T-c. Our measurements establish the existence of a disorder-driven critical point in the nonequilibrium phase diagram. In addition, we observe scaling behavior in the vicinity of the critical point and determine the critical exponents to beta = 0.022 +/-0.006 and beta delta = 0.30 +/-0.03. (C) 2001 American Institute of Physics.
引用
收藏
页码:7466 / 7468
页数:3
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