Magnetic structure of Gd5Ge4 -: art. no. 214408

被引:58
作者
Tan, L [1 ]
Kreyssig, A
Kim, JW
Goldman, AI
McQueeney, RJ
Wermeille, D
Sieve, B
Lograsso, TA
Schlagel, DL
Budko, SL
Pecharsky, VK
Gschneidner, KA
机构
[1] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
[2] US DOE, Ames Lab, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
关键词
D O I
10.1103/PhysRevB.71.214408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gd5Ge4 crystallizes in the orthorhombic space group Pnma, and orders antiferromagnetically below the Neel temperature T-N similar to 127 K. We have employed x-ray resonant magnetic scattering to elucidate the details of the magnetic structure. The magnetic unit cell is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnm'a. The magnetic moments are primarily aligned along the c axis and the c components of the magnetic moments at the three different sites are equal. The ferromagnetic Gd-rich slabs are stacked antiferromagnetically along the b direction.
引用
收藏
页数:6
相关论文
共 20 条
[2]   Determination of magnetic-moment directions using x-ray resonant exchange scattering [J].
Detlefs, C ;
Islam, AHMZ ;
Goldman, AI ;
Stassis, C ;
Canfield, PC .
PHYSICAL REVIEW B, 1997, 55 (02) :R680-R683
[3]   RESONANT X-RAY-DIFFRACTION NEAR THE IRON-K EDGE IN HEMATITE (ALPHA-FE2O3) [J].
FINKELSTEIN, KD ;
SHEN, Q ;
SHASTRI, S .
PHYSICAL REVIEW LETTERS, 1992, 69 (10) :1612-1615
[4]   Reversible spin-flop and irreversible metamagneticlike transitions induced by a magnetic field in the layered Gd5Ge4 antiferromagnet -: art. no. 144428 [J].
Levin, EM ;
Gschneidner, KA ;
Lograsso, TA ;
Schlagel, DL ;
Pecharsky, VK .
PHYSICAL REVIEW B, 2004, 69 (14) :144428-1
[5]   Magnetic correlations induced by magnetic field and temperature in Gd5Ge4 -: art. no. 214427 [J].
Levin, EM ;
Gschneidner, KA ;
Pecharsky, VK .
PHYSICAL REVIEW B, 2002, 65 (21) :1-5
[6]   Magnetic-field and temperature dependencies of the electrical resistance near the magnetic and crystallographic first-order phase transition of Gd-5(Si2Ge2) [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA .
PHYSICAL REVIEW B, 1999, 60 (11) :7993-7997
[7]   Magnetic field and temperature-induced first-order transition in Gd5(Si1.5Ge2.5):: a study of the electrical resistance behavior [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA ;
Tomlinson, P .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 210 (1-3) :181-188
[8]   Nature of the first-order antiferromagnetic-ferromagnetic transition in the Ge-rich magnetocaloric compounds Gd5(SixGe1-x)4 [J].
Morellon, L ;
Blasco, J ;
Algarabel, PA ;
Ibarra, MR .
PHYSICAL REVIEW B, 2000, 62 (02) :1022-1026
[9]   Giant magnetoresistance near the magnetostructural transition in Gd5(Si1.8Ge2.2) [J].
Morellon, L ;
Stankiewicz, J ;
García-Landa, B ;
Algarabel, PA ;
Ibarra, MR .
APPLIED PHYSICS LETTERS, 1998, 73 (23) :3462-3464
[10]   Magnetic-field-induced structural phase transition in Gd5(Si1.8Ge2.2) [J].
Morellon, L ;
Algarabel, PA ;
Ibarra, MR ;
Blasco, J ;
García-Landa, B ;
Arnold, Z ;
Albertini, F .
PHYSICAL REVIEW B, 1998, 58 (22) :R14721-R14724