The preparation and thermoelectric properties of Ti0.5Zr0.25Hf0.25Co1-xNixSb half-Heusler compounds

被引：50

作者：

Xie, Wenjie ^{[1
]}

Jin, Qiao ^{[1
]}

Tang, Xinfeng ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 04期

关键词：

LATTICE THERMAL-CONDUCTIVITY; PARTIAL SUBSTITUTION; TRANSPORT-PROPERTIES; FERMI-LEVEL; TEMPERATURE; ZRNISN; NI; TI; ELECTRON; PHASES;

D O I：

10.1063/1.2885113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni doping Ti0.5Zr0.25Hf0.25Co1-xNixSb (x=0-0.05) half-Heusler compounds have been fabricated by combining high-frequency induction melting with spark plasma sintering technique, and their thermoelectric transport properties have been investigated in the temperature range of 300-900 K. With the increase of Ni doping content, the electrical conductivity increases significantly, and withal the Seebeck coefficient of all doped samples improve to some extent compared with the undoped Ti0.5Zr0.25Hf0.25CoSb compound. These lead to a great improvement in the power factor, and the highest power factor of 1.63 X 10(-3) W m(-1) K-1 is obtained at 715 K for Ti0.5Zr0.25Hf0.25Co0.95Ni0.05Sb compound. Furthermore, thermal conductivity of Ti0.5Zr0.25Hf0.25Co1-xNixSb compounds decrease remarkably due to Zr and Hf substitutions on Ti site and Ni doping on Co site. Compared with ternary TiCoSb compound, the thermal conductivity of Ti0.5Zr0.25Hf0.25Co1-xNixSb compound decreases 415%-430% at room temperature, and compared with undoped Ti0.5Zr0.25Hf0.25CoSb compound, the thermal conductivity of Ti0.5Zr0.25Hf0.25Co0.95Ni0.05Sb decreases 34% at 300 K and 21% at 900 K, respectively. A maximum dimensionless figure of merit ZT of 0.51 has been achieved for Ti0.5Zr0.25Hf0.25Co0.95Ni0.05Sb compound at 813 K. (c) 2008 American Institute of Physics.

引用

页数：5

共 31 条

[1] GAP AT FERMI LEVEL IN SOME NEW D-ELECTRON AND F-ELECTRON INTERMETALLIC COMPOUNDS [J].

ALIEV, FG .

PHYSICA B, 1991, 171 (1-4) :199-205

[2] NARROW-BAND IN THE INTERMETALLIC COMPOUNDS TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

KOZYRKOV, VV ;

MOSHCHALKOV, VV ;

SCOLOZDRA, RV ;

DURCZEWSKI, K .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1990, 80 (03) :353-357

[3] Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx [J].

Bhattacharya, S ;

Pope, AL ;

Littleton, RT ;

Tritt, TM ;

Ponnambalam, V ;

Xia, Y ;

Poon, SJ .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2476-2478

[4] Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys [J].

Bhattacharya, S ;

Tritt, TM ;

Xia, Y ;

Ponnambalam, V ;

Poon, SJ ;

Thadhani, N .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :43-45

[5]

BHATTACHARYA S, 2000, MRS S P, V626

[6] Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C -: art. no. 042106 [J].

Culp, SR ;

Poon, SJ ;

Hickman, N ;

Tritt, TM ;

Blumm, J .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[7] Thermoelectric cooling and power generation [J].

DiSalvo, FJ .

SCIENCE, 1999, 285 (5428) :703-706

[8] Efficient dopants for ZrNiSn-based thermoelectric materials [J].

Hohl, H ;

Ramirez, AP ;

Goldmann, C ;

Ernst, G ;

Wölfing, B ;

Bucher, E .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709

[9]

JEITSCHKO W, 1970, METALL TRANS, V1, P3159

[10] Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn [J].

Katsuyama, S ;

Matsushima, H ;

Ito, M .

JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 385 (1-2) :232-237

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