Interface layer thickness effect on the photocurrent of Pt sandwiched polycrystalline ferroelectric Pb(Zr, Ti)O3 films

被引：34

作者：

Cao, Dawei ^{[1
]}

Zhang, Hui

Fang, Liang

Dong, Wen

Zheng, Fengang

Shen, Mingrong

机构：

[1] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 10期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; ZIRCONATE-TITANATE; BIFEO3;

D O I：

10.1063/1.3488829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the analysis of the photocurrent behavior of Pt sandwiched Pb(Zr0.2Ti0.8)O-3 (PZT) films, the experimental evidence of top Pt/PZT interface layer thickness effect on the photocurrent is reported. It was well established before that the photocurrent of metal/ferroelectric film is attributed to the height of Schottky contact barrier. However, our results suggest that the photocurrent of Pt/PZT interface contact is determined not only by the barrier height but also by the interface layer thickness, namely, by the built-in electrical field at the interface layer. The mechanism behind such photocurrent phenomenon is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488829]

引用

页数：3

共 21 条

[1] Photoconductivity in BiFeO3 thin films
Basu, S. R.
Martin, L. W.
Chu, Y. H.
Gajek, M.
Ramesh, R.
Rai, R. C.
Xu, X.
Musfeldt, J. L.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (09)
[2] Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel
Boerasu, I
Pintilie, L
Pereira, M
Vasilevskiy, MI
Gomes, MJM
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) : 4776 - 4783
[3] Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films
Cao, Dawei
Xu, Jie
Fang, Liang
Dong, Wen
Zheng, Fengang
Shen, Mingrong
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (19)
[4] Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
Choi, T.
Lee, S.
Choi, Y. J.
Kiryukhin, V.
Cheong, S. -W.
[J]. SCIENCE, 2009, 324 (5923) : 63 - 66
[5] Photovoltaic effect of lead lanthanum zirconate titanate in a layered film structure design
Ichiki, M
Maeda, R
Morikawa, Y
Mabune, Y
Nakada, T
Nonaka, K
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (03) : 395 - 397
[6] Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films
Ji, Wei
Yao, Kui
Liang, Yung C.
[J]. ADVANCED MATERIALS, 2010, 22 (15) : 1763 - +
[7] Transient photocurrents in lead zirconate titanate thin films
Kholkin, A
Boiarkine, O
Setter, N
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 130 - 132
[8] Ferroelectric polarization-leakage current relation in high quality epitaxial Pb(Zr, Ti)O3 films
Pintilie, L.
Vrejoiu, I.
Hesse, D.
LeRhun, G.
Alexe, M.
[J]. PHYSICAL REVIEW B, 2007, 75 (10):
[9] Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers -: art. no. 192902
Pintilie, L
Lisca, M
Alexe, M
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
[10] Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties
Pintilie, L
Alexe, M
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)

← 1 2 3 →