Strain induced ferroelectrosity in epitaxial SrTiO3 films

被引：10

作者：

Gevorgian, S ^{[1
]}

Petrov, PK

Abadei, S

Ivanov, Z

机构：

[1] Chalmers, S-41296 Gothenburg, Sweden

[2] Ericsson Microwave Syst, S-43184 Molndal, Sweden

来源：

INTEGRATED FERROELECTRICS | 2001年 / 33卷 / 1-4期

关键词：

Strontium Titanate; thin film; strain; interface; phase transition;

D O I：

10.1080/10584580108222313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave performances of planar capacitors Formed on epitaxial SrTiO3 (STO) films reveal that two-dimensional, in-plane strain in the film lead to a formation of a stable non-cubic, low symmetry ferroelectric phase. The residual polarization vector has two stable states, normal to the film surface. and may be switched under applied DC bias. Due to the charges in surface/interface levels, the films may contain either a single or opposing domains.

引用

页码：311 / 321

页数：11

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