High power superluminescent diodes for 1.3 mu m wavelengths

被引:16
作者
Holtmann, C
Besse, PA
Melchior, H
机构
[1] Institute of Quantum Electronics, Swiss Fed. Institute of Technology
[2] Institute of Microsystems, Swiss Fed. Institute of Technology
关键词
superluminescent diodes;
D O I
10.1049/el:19961117
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Superluminescent diodes for optical low coherence reflectometry in the 1.3 mu m range are reported with a singlemode fibre coupled output power of 8mW. The high gain amplifier structure with 10 degrees tilted SiO/Al2O3 coated facets ensures this high power, broad spectral emission over 30 nm. The integrated absorber, together with the tilted and coated facet, attenuates the light reflected back from the absorber facet into the gain region by up to -149dB. Internal reflection induced nonuniformities at maximum output power remain below 2 x 10(-2).
引用
收藏
页码:1705 / 1706
页数:2
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