Polarization independent bulk active region semiconductor optical amplifiers for 1.3 mu m wavelengths

被引:28
作者
Holtmann, C
Besse, PA
Brenner, T
Melchior, H
机构
[1] SWISS FED INST TECHNOL,INST MICROENGN,CH-1015 LAUSANNE,SWITZERLAND
[2] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1109/68.481111
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Semiconductor optical amplifiers for 1.3 mu m are realized combining single-step grown bulk active region with ridge-waveguides. Achieved fiber-to-fiber gains are in excess of 27 dB with spectral ripples below 0.2 dB, Gain is polarization insensitive to within 1 dB over the entire range of driving current, 1.28 mu m to 1.34 mu m wavelength and 10 degrees C to 50 degrees C heat sink temperature. Intrinsic noise figure is 6.3 dB, Gain saturates at +10 dBm.
引用
收藏
页码:343 / 345
页数:3
相关论文
共 11 条
  • [1] LOW COUPLING LOSSES BETWEEN INP/INGAASP OPTICAL AMPLIFIERS AND MONOLITHICALLY INTEGRATED WAVE-GUIDES
    BRENNER, T
    GINI, E
    MELCHIOR, H
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (02) : 212 - 214
  • [2] POLARIZATION-INSENSITIVE, NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS AT 1.5-MU-M
    COLE, S
    COOPER, DM
    DEVLIN, WJ
    ELLIS, AD
    ELTON, DJ
    ISAAC, JJ
    SHERLOCK, G
    SPURDENS, PC
    STALLARD, WA
    [J]. ELECTRONICS LETTERS, 1989, 25 (05) : 314 - 315
  • [3] DOUSSIERE P, 1992, P OPT AMPL THEIR APP
  • [4] HOITMANN C, 1993, P OPT AMPL THEIR APP
  • [5] HOLTMANN C, 1995, P OPT AMPL THEIR APP
  • [6] POLARIZATION INSENSITIVE SEMICONDUCTOR-LASER AMPLIFIERS WITH TENSILE STRAINED INGAASP/INGAASP MULTIPLE QUANTUM-WELL STRUCTURE
    JOMA, M
    HORIKAWA, H
    XU, CQ
    YAMADA, K
    KATOH, Y
    KAMIJOH, T
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (02) : 121 - 122
  • [7] VERY-LOW POWER-CONSUMPTION SEMICONDUCTOR OPTICAL AMPLIFIER ARRAY
    KITAMURA, S
    KOMATSU, K
    KITAMURA, M
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) : 147 - 148
  • [8] POLARIZATION INSENSITIVE TRAVELING-WAVE TYPE AMPLIFIER USING STRAINED MULTIPLE QUANTUM-WELL STRUCTURE
    MAGARI, K
    OKAMOTO, M
    YASAKA, H
    SATO, K
    NOGUCHI, Y
    MIKAMI, O
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) : 556 - 558
  • [9] 1.55 MU-M HIGH-GAIN POLARIZATION-INSENSITIVE SEMICONDUCTOR TRAVELING-WAVE AMPLIFIER WITH LOW DRIVING CURRENT
    MERSALI, B
    GELLY, G
    ACCARD, A
    LAFRAGETTE, JL
    DOUSSIERE, P
    LAMBERT, M
    FERNIER, B
    [J]. ELECTRONICS LETTERS, 1990, 26 (02) : 124 - 125
  • [10] 27-DB GAIN UNIDIRECTIONAL 1300-NM POLARIZATION-INSENSITIVE MULTIPLE-QUANTUM-WELL LASER-AMPLIFIER MODULE
    TIEMEIJER, LF
    THIJS, PJA
    VANDONGEN, T
    BINSMA, JJM
    JANSEN, EJ
    VERBOVEN, AJM
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (12) : 1430 - 1432