1.55 MU-M HIGH-GAIN POLARIZATION-INSENSITIVE SEMICONDUCTOR TRAVELING-WAVE AMPLIFIER WITH LOW DRIVING CURRENT

被引:20
作者
MERSALI, B
GELLY, G
ACCARD, A
LAFRAGETTE, JL
DOUSSIERE, P
LAMBERT, M
FERNIER, B
机构
[1] Laboratoires de Marcoussis, 91460 Marcoussis, Route de Nozay
关键词
Epitaxy; Optical communications; Semiconductor lasers;
D O I
10.1049/el:19900085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polarisation-insensitive GaInAsP/InP semiconductor amplifiers have been fabricated from gas source molecular beam epitaxy (GSMBE) and BH laser with multilayer coatings. The TE and TM gains are equal to within 1 dB and an average internal gain of 28 dB is obtained at only 50 mA forward current. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
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页码:124 / 125
页数:2
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