Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions?

被引：47

作者：

Yan, Y ^{[1
]}

Albin, D ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 02期

关键词：

D O I：

10.1063/1.1338969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd-O bonds at the grain boundaries, which are resistance to the S diffusion. (C) 2001 American Institute of Physics.

引用

页码：171 / 173

页数：3