Thermal oxidation of cleft surface of InSe single crystal

被引：33

作者：

Balitskii, OA ^{[1
]}

Lutsiv, RV ^{[1
]}

Savchyn, VP ^{[1
]}

Stakhira, JM ^{[1
]}

机构：

[1] Lviv Ivan Franko State Univ, Dept Phys, UA-290005 Lviv, Ukraine

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 56卷 / 01期

关键词：

cleft surface; In2O3; InSe; layer semiconductors; phase formation; thermal oxidation;

D O I：

10.1016/S0921-5107(98)00213-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal oxidation processes of cleft surface of InSe single crystals in the temperature range from 200 to 615 degrees C have been investigated. We used the cathodoluminescence and X-ray diffraction methods. We established that adsorption processes were activated and defect creation on the cleft InSe surface begun at the low temperatures. The formation of In2Se3 and In-2(SeO4)(3) phases took place at medium temperatures. In2O3 phase was formed at high temperatures. Results are in good agreement with the In-Se-O phase diagram that generally includes the In-2(SeO4)(3) phase formation. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：5 / 10

页数：6

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