Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

被引：16

作者：

Avasthi, Sushobhan ^{[1
,3
]}

Qi, Yabing ^{[1
,3
]}

Vertelov, Grigory K. ^{[2
,3
]}

Schwartz, Jeffrey ^{[2
,3
]}

Kahn, Antoine ^{[1
,3
]}

Sturm, James C. ^{[1
,3
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[3] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Princeton, NJ 08544 USA

来源：

SURFACE SCIENCE | 2011年 / 605卷 / 13-14期

基金：

美国国家科学基金会;

关键词：

9,10-phenanthrenequinone; Silicon-organic; Heterojunction; Passivation; SI(100) SURFACES; INTERFACES; LEVEL; SEMICONDUCTORS; SPECTROSCOPY; SI(001); SI(111); ENERGY;

D O I：

10.1016/j.susc.2011.04.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface. The band-bending at the PQ-passivated silicon surface is negligible for both n- and p-type substrates, demonstrating a low density of surface defects. Finally we show that PQ forms a semiconducting wide-bandgap type-I heterojunction with silicon. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1308 / 1312

页数：5

共 27 条

[1]

Avasthi S., 2009, PHOT SPEC C PVSC 200

[2] Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone [J].