Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

被引：37

作者：

Avasthi, Sushobhan ^{[1
,3
]}

Qi, Yabing ^{[1
,3
]}

Vertelov, Grigory K. ^{[2
,3
]}

Schwartz, Jeffrey ^{[2
,3
]}

Kahn, Antoine ^{[1
,3
]}

Sturm, James C. ^{[1
,3
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[3] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

基金：

美国国家科学基金会;

关键词：

dangling bonds; electron mobility; elemental semiconductors; MIS capacitors; organic semiconductors; passivation; semiconductor heterojunctions; silicon; transistors; CARRIER LIFETIMES; SOLAR-CELLS; MONOLAYERS; INTERFACE;

D O I：

10.1063/1.3429585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Merged organic-silicon heterojunction devices require the passivation of dangling bonds at the silicon surface, preferably with a low-temperature process. In this paper, we demonstrate the high-quality passivation of the silicon (100) surface using an organic molecule (9,10-phenanthrenequinone, PQ). PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors and silicon. We measure low recombination velocities (similar to 150 cm/s) at the PQ-silicon interface. Metal/organic-insulator/silicon capacitors and transistors prove that at PQ-silicon interface, the Fermi level can be modulated. The formation of an inversion layer with electron mobility of 600 cm(2)/V.s further demonstrates the passivation quality of PQ. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429585]

引用

页数：3

共 14 条

[1] Formation of π-conjugated molecular arrays on silicon (001) surfaces by heteroatomic Diels-Alder chemistry [J].