New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

被引：9

作者：

Gudovskikh, A. S. ^{[1
]}

Chouffot, R. ^{[2
,3
,4
,5
]}

Kleider, J. P. ^{[2
,3
,4
,5
]}

Kaluzhniy, N. A. ^{[6
]}

Lantratov, V. M. ^{[6
]}

Mintairov, S. A. ^{[6
]}

Damon-Lacoste, J. ^{[7
]}

Eon, D. ^{[7
]}

Roca i Cabarrocas, P. ^{[7
]}

Ribeyron, P. -J. ^{[8
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[2] CNRS, Lab Genie Elect Paris, UMR 8507, F-91192 Gif Sur Yvette, France

[3] Supelec, F-91192 Gif Sur Yvette, France

[4] Univ Paris Sud, F-91192 Gif Sur Yvette, France

[5] Univ Paris 06, F-91192 Gif Sur Yvette, France

[6] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[7] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

[8] INES CEA, F-38054 Grenoble 9, France

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

关键词：

heterojunctions; interface; solar cell; capacitance;

D O I：

10.1016/j.tsf.2007.12.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：6786 / 6790

页数：5

共 11 条

[1]

[Anonymous], P 19 EUR PHOT SOL EN

[2] Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows [J].

Gudovskikh, A. S. ;

Kaluzhniy, N. A. ;

Lantratov, V. M. ;

Mintairov, S. A. ;

Shvarts, M. Z. ;

Andreev, V. M. .

THIN SOLID FILMS, 2008, 516 (20) :6739-6743

[3] Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination [J].

Gudovskikh, A. S. ;

Kleider, J. P. .

APPLIED PHYSICS LETTERS, 2007, 90 (03)

[4] Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy [J].

Gudovskikh, A. S. ;

Kleider, J. -P. ;

Damon-Lacoste, J. ;

Cabarrocas, P. Roca i ;

Veschetti, Y. ;

Muller, J. -C. ;

Ribeyron, P. -J. ;

Rolland, E. .

THIN SOLID FILMS, 2006, 511 :385-389

[5] Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells [J].

Jensen, N ;

Rau, U ;

Hausner, RM ;

Uppal, S ;

Oberbeck, L ;

Bergmann, RB ;

Werner, JH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2639-2645

[6] Electronic states in a-Si:H/c-Si heterostructures [J].

Korte, L. ;

Laades, A. ;

Schmidt, M. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1217-1220

[7] Passivation of interfaces in high-efficiency photovoltaic devices [J].

Kurtz, SR ;

Olson, JM ;

Friedman, DJ ;

Geisz, JF ;

Bertness, KA ;

Kibbler, AE .

COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 :95-106

[8] Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafers [J].

Schmidt, M ;

Schoepke, A ;

Korte, L ;

Milch, O ;

Fuhs, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :211-214

[9] Influence of defects and band offsets on carrier transport mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells [J].

Song, YJ ;

Park, MR ;

Guliants, E ;

Anderson, WA .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 64 (03) :225-240

[10]

STANGL R, 2003, P 3 WORLD PHOT C OS

← 1 2 →