Electronic states in a-Si:H/c-Si heterostructures

被引：38

作者：

Korte, L. ^{[1
]}

Laades, A. ^{[1
]}

Schmidt, M. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

amorphous semiconductors; silicon; solar cells; heterojunctions; photovoltaics; band structure; defects;

D O I：

10.1016/j.jnoncrysol.2005.10.046

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated PECVD-deposited ultrathin intrinsic a-Si:H layers on c-Si substrates using UY-excited photoemission spectroscopy (hv = 4-8 eV) and surface photovoltage measurements. For samples deposited at 230 degrees C, the Urbach energy is minimal, the Fermi level closest to midgap and the interface recombination velocity has a minimum. The a-Si:H/c-Si interface density of states is comparable to that of thermally oxidized silicon interfaces. However, the measured a-Si:H dangling bond densities are generally higher than in thick films and not correlated with the Urbach energy. This is ascribed to additional disorder induced by the proximity of the a-Si:H/c-Si interface and H-rich growth in the film/substrate interface region. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1217 / 1220

页数：4

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