Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

被引：79

作者：

Fujiwara, H ^{[1
]}

Kondo, M ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovoltaics, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1850612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In amorphous/crystalline silicon heterojunction solar cells, we have performed real-time thickness control of hydrogenated amorphous silicon (a-Si:H) layers with a precision better than +/- 1 Angstrom by applying spectroscopic ellipsometry (SE). A heterojunction solar cell fabricated by this process shows a relatively high conversion efficiency of 14.5 %. At the amorphous/crystalline interface, however, infrared attenuated total reflection spectroscopy (ATR) revealed the formation of a porous a-Si:H layer with a large SiH2-hydrogen content of 27 at. %. Based on SE and ATR results, we discuss the growth processes and structures of a-Si:H in heterojunction solar cells. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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