MICROSTRUCTURAL EVOLUTION OF ULTRATHIN AMORPHOUS-SILICON FILMS BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY

被引：54

作者：

AN, I ^{[1
]}

NGUYEN, HV ^{[1
]}

NGUYEN, NV ^{[1
]}

COLLINS, RW ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.65.2274

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The nucleation of thin-film amorphous silicon (a-Si), sputter deposited on oxidized c-Si, is investigated by real-time spectroscopic ellipsometry from 1.5 to 4.5 eV with a resolution of 3 s and a repetition period of 15 s. Analysis of real-time spectra provides unprecedented sensitivity and quantitative information on the microstructural evolution. Under preparation conditions resulting in a-Si of the highest bulk Si-Si bond-packing density, an abrupt transition representing the onset of bulk film growth can be identified unambiguously when nuclei reach a thickness of 131. © 1990 The American Physical Society.

引用

页码：2274 / 2277

页数：4

共 21 条

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