Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air

被引：59

作者：

Henrion, W

Rebien, M

Angermann, H

Röseler, A

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

[2] Inst Spektrochem & Angew Spektroskopie, D-12489 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2002年 / 202卷 / 3-4期

关键词：

ellipsometry; silicon oxides; surface photovoltage; H-termination; microcrystalline silicon; surface passivation;

D O I：

10.1016/S0169-4332(02)00923-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By simultaneous surface photovoltage (SPV) as well as ultraviolet-visible (UV-Vis) and Fourier-transform infrared (FTIR) spectroscopic ellipsometry (SE) measurements on H-terminated Si(111) and Si(100) wafers as well as muc-Si:H surfaces directly after preparation and after storage in clean-room air, correlations were established between the preparation-induced surface morphology and the stability of the surface passivation against native oxidation. It was shown that the progression of the initial oxidation phase on differently prepared H-terminated and etched surfaces strongly depends on the remaining surface microroughness and interface state density. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：199 / 205

页数：7

共 22 条

[1] The preparation of flat H-Si(111) surfaces in 40% NH4F revisited [J].