Interface recombination in heterojunctions of amorphous and crystalline silicon

被引：68

作者：

Froitzheim, A ^{[1
]}

Brendel, K ^{[1
]}

Elstner, L ^{[1
]}

Fuhs, W ^{[1
]}

Kliefoth, K ^{[1
]}

Schmidt, M ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Abt Silizium Photovoltaik, D-12489 Berlin, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01029-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Heterojunction solar cells consisting of an n-type a-Si:H(n) emitter and a p-type monocrystalline silicon wafer have been studied with particular emphasis on the role of interface recombination. It is shown that the form of the I-V characteristics and the effective interface recombination velocity depend on the treatment of the Si-wafer prior to the deposition of the amorphous emitter, Numerical simulation suggests that the non-exponential (S-shape) dependence of the I-V curves under illumination arises from a high density of interface states which results in enhanced recombination via interface states. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：663 / 667

页数：5

共 8 条

[1] Wet-chemical passivation of Si(111)- and Si(100)-substrates [J].

Angermann, H ;

Henrion, W ;

Röseler, A ;

Rebien, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :178-183

[2]

FROITZHEIM A, 2000, P 16 EUR PVSEC GLASG, P1580

[3]

Greenspan M., 1995, Sport psychology interventions., P177

[4] 20.7% highest efficiency large area (100.5cm2) HIT™ cell [J].

Sakata, H ;

Nakai, T ;

Baba, T ;

Taguchi, M ;

Tsuge, S ;

Uchihashi, K ;

Kiyama, S .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :7-12

[5]

SCHROPP REI, 1998, AMORPHOUS MICROCRYST, P183

[6] LOW-ENERGY YIELD SPECTROSCOPY AS A NOVEL TECHNIQUE FOR DETERMINING BAND OFFSETS - APPLICATION TO THE C-SI(100)/ALPHA-SI-H HETEROSTRUCTURE [J].

SEBASTIANI, M ;

DIGASPARE, L ;

CAPELLINI, G ;

BITTENCOURT, C ;

EVANGELISTI, F .

PHYSICAL REVIEW LETTERS, 1995, 75 (18) :3352-3355

[7] DEVELOPMENT OF NEW A-SI C-SI HETEROJUNCTION SOLAR-CELLS - ACJ-HIT (ARTIFICIALLY CONSTRUCTED JUNCTION-HETEROJUNCTION WITH INTRINSIC THIN-LAYER) [J].

TANAKA, M ;

TAGUCHI, M ;

MATSUYAMA, T ;

SAWADA, T ;

TSUDA, S ;

NAKANO, S ;

HANAFUSA, H ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11) :3518-3522

[8] Defects and transport in a-Si:H/c-Si heterojunctions [J].

Unold, T ;

Rösch, M ;

Bauer, GH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :1033-1037

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