Defects and transport in a-Si:H/c-Si heterojunctions

被引：20

作者：

Unold, T ^{[1
]}

Rösch, M ^{[1
]}

Bauer, GH ^{[1
]}

机构：

[1] Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00900-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated amorphous silicon/crystalline silicon np and pn heterojunction devices with transport and capacitance measurement techniques. The devices consist of doped n-type or p-type hydrogenated amorphous silicon deposited on p-type or n-type float-zone crystalline silicon wafers. Low temperature (100 It) photocurrent measurements in conjunction with numerical simulations indicate a large conduction band offset at the interface between the two materials. We show experimentally and with numerical simulation that defects at the heterojunction interface affect the low frequency capacitance and the electronic transport in the devices. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：1033 / 1037

页数：5

共 13 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

[Anonymous], HETEROJUNCTION BAND

[3]

BRUGGEMANN R, 1995, SOLID STATE PHENOM, V44, P505

[4] ENERGY-BAND DIAGRAM OF THE A-SI-H/C-SI INTERFACE AS DETERMINED BY INTERNAL PHOTOEMISSION [J].

CUNIOT, M ;

MARFAING, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02) :291-300

[5] Conduction- and valence-band offsets at the hydrogenated amorphous silicon-carbon/crystalline silicon interface via capacitance techniques [J].

Essick, JM ;

Nobel, Z ;

Li, YM ;

Bennett, MS .

PHYSICAL REVIEW B, 1996, 54 (07) :4885-4890

[6] BAND OFFSETS AND DEEP DEFECT DISTRIBUTION IN HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON HETEROSTRUCTURES [J].

ESSICK, JM ;

COHEN, JD .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1232-1234

[7]

FORREST SR, 1987, HETEROJUNCTION BAND

[8] Interface effects on the carrier transport and photovoltaic properties of hydrogenated amorphous silicon/crystalline silicon solar cells [J].

Jagannathan, B ;

Anderson, WA .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 44 (02) :165-176

[9]

KOLTER M, 1995, P 13 EUR PHOT SOL EN, P1526

[10] ENERGY-BAND DISCONTINUITIES IN A HETEROJUNCTION OF AMORPHOUS HYDROGENATED SI AND CRYSTALLINE SI MEASURED BY INTERNAL PHOTOEMISSION [J].

MIMURA, H ;

HATANAKA, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :326-328

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