CONDUCTION-BAND DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON DETERMINED BY INVERSE PHOTOEMISSION

被引：40

作者：

JACKSON, WB

OH, SJ

TSAI, CC

ALLEN, JW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.53.1481

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1481 / 1484

页数：4

共 23 条

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