Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows

被引：35

作者：

Gudovskikh, A. S. ^{[1
]}

Kaluzhniy, N. A. ^{[2
]}

Lantratov, V. M. ^{[2
]}

Mintairov, S. A. ^{[2
]}

Shvarts, M. Z. ^{[2
]}

Andreev, V. M. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

基金：

俄罗斯基础研究基金会;

关键词：

solar cells; heterojunctions; interface properties; modelling;

D O I：

10.1016/j.tsf.2007.12.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of photoelectrical properties of heterostructure solar cells biased on GaInP is performed using a numerical modelling. The influence of AlInP/GaInP and AlGaAs/GaInP interface parameters and properties of AlInP layer on solar cells characteristics is shown. In particular, a crucial role of the band offsets and of interface states in defining the solar cell efficiency is demonstrated. The observed difference in photovoltaic performance of p-n versus n-p junctions is explained in terms of the parameters outlined above. The simulation results are supported by experimental data. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：6739 / 6743

页数：5

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