ALLOY SCATTERING IN P-TYPE ALXGA1-XAS

被引：55

作者：

LOOK, DC

LORANCE, DK

SIZELOVE, JR

STUTZ, CE

EVANS, KR

WHITSON, DW

机构：

[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,ELR,WRIGHT PATTERSON AFB,OH 45433

[2] INDIANA UNIV PENN,DEPT PHYS,INDIANA,PA 15701

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole mobility of Be-doped (approximately 2 x 10(17) cm-3) AlxGa1-xAs, for x = 0-1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x = 0.5. The main parameter in the alloy scattering formulation, the alloy potential E(al), is found to be about 0.5 eV for p-type AlxGa1-xAs.

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页码：260 / 266

页数：7

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