Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

被引：34

作者：

Poodt, P. ^{[1
]}

Tiba, V. ^{[1
]}

Werner, F. ^{[2
]}

Schmidt, J. ^{[2
]}

Vermeer, A. ^{[3
]}

Roozeboom, F. ^{[1
,4
]}

机构：

[1] TNO, NL-5600 HE Eindhoven, Netherlands

[2] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany

[3] SoLayTec, NL-5652 AM Eindhoven, Netherlands

[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 09期

关键词：

D O I：

10.1149/1.3610994

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610994] All rights reserved.

引用

页码：H937 / H940

页数：4

共 17 条

[1] High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J].