Doping effects in organic electroluminescent devices

被引：63

作者：

Yang, J ^{[1
]}

Shen, J

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.368271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several possible doping effects in organic electroluminescent devices are studied within the framework of the trap-charge limited conduction models. A significant increase in the trapped charges in the doped layer can cause an overall trap charge redistribution and a shift of the location of the recombination zone. Some experimental data are analyzed and their possible relevance to our predictions is discussed. An experimental verification scheme is also proposed. (C) 1998 American Institute of Physics. [S0021-8979(98)02016-7].

引用

页码：2105 / 2111

页数：7

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