Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

被引：105

作者：

Vigué, F ^{[1
]}

Vennéguès, P ^{[1
]}

Vézian, S ^{[1
]}

Laügt, M ^{[1
]}

Faurie, JP ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.1384907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural properties of high-quality (0001)ZnO/Al2O3 films grown by plasma-enhanced molecular-beam epitaxy are investigated by x-ray diffraction and transmission electron microscopy. The only defects encountered are threading dislocations with a density of 10(10)-4x10(10) cm(-2). Most numerous dislocations are pure-edge dislocations (Burgers vector of 1/3 < 11 (2) over bar0 >), which accommodate slight in-plane misorientations between subgrains. The oxygen polarity of these films is also established. (C) 2001 American Institute of Physics.

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页码：194 / 196

页数：3

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