Simultaneous imaging of the In and As sublattice on InAs(110)-(1 X 1) with dynamic scanning force microscopy

被引:48
作者
Schwarz, A
Allers, W
Schwarz, UD
Wiesendanger, R
机构
[1] Univ Hamburg, Inst Phys Appl, D-20344 Hamburg, Germany
[2] Univ Hamburg, Microstruct Res Ctr, D-20344 Hamburg, Germany
关键词
surface structure; III-V-semiconductor; InAs(110); dynamic scanning force microscopy; low temperature scanning force microscopy;
D O I
10.1016/S0169-4332(98)00543-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Distance-dependent dynamic scanning force microscopy (SFM) measurements of InAs(110)-(1 x 1) acquired in ultrahigh vacuum at low temperatures are presented. On this surface, the atoms of the As sublattice are lifted by 80 pm with respect to the In sublattice and terminate the surface. Thus, since in most dynamic SFM images only protrusions with the periodicity of one sublattice are observed, these protrusions are correlated with the positions of the As atoms. However, under certain conditions, an additional contrast is visible which can be attributed to an interaction between the foremost tip atoms and the in atoms. Possible contrast mechanisms are discussed in terms of tip-sample distance and tip structure. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:293 / 297
页数:5
相关论文
共 16 条
[1]   FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].
ALBRECHT, TR ;
GRUTTER, P ;
HORNE, D ;
RUGAR, D .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673
[2]   Scanning force microscope with atomic resolution in ultrahigh vacuum and at low temperatures [J].
Allers, W ;
Schwarz, A ;
Schwarz, UD ;
Wiesendanger, R .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (01) :221-225
[3]  
BAMMERLIN M, 1997, PROBE MICROSCOPY, V1, P3
[4]   ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V-COMPOUND SEMICONDUCTORS - DETERMINATION BY TOTAL-ENERGY MINIMIZATION AND ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION [J].
DUKE, CB ;
MAILHIOT, C ;
PATON, A ;
CHADI, DJ ;
KAHN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1087-1088
[5]  
ENGELS B, 1996, THESIS KFA JULICH RW
[6]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[7]  
FUJISAWA S, 1996, PHILOS MAG A, V75, P1327
[8]   Atom-resolved image of the TiO2(110) surface by noncontact atomic force microscopy [J].
Fukui, K ;
Onishi, H ;
Iwasawa, Y .
PHYSICAL REVIEW LETTERS, 1997, 79 (21) :4202-4205
[9]   ATOMIC-RESOLUTION OF THE SILICON (111)-(7X7) SURFACE BY ATOMIC-FORCE MICROSCOPY [J].
GIESSIBL, FJ .
SCIENCE, 1995, 267 (5194) :68-71
[10]  
HOLSCHER H, UNPUB